SI8901EDB Datasheet, PDF (2/3 Pages) Vishay Siliconix – Bi-Directional P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si8901EDB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
t_d(on)
t_r
t_d(off)
t_f
V_SS = V_GS, I_D = − 250µA
V_SS = − 5V, V_GS = − 4.5V
V_GS = − 4.5V, I_SS = − 1A
V_GS = − 2.5V, I_SS = − 1A
V_GS = − 1.8V, I_SS = − 1A
V_SS = −10V, I_SS = − 1A
V_SS = − 10V, R_L = 10Ω
I_SS ≅ − 1A, V_GEN = − 4.5V, R_G = 6Ω
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
Simulated Measured
Data
Data
Unit
0.49
V
42
A
0.046
0.048
0.060
0.062
Ω
0.075
0.081
6.2
7
S
2
2.3
2
2.2
µs
2.1
1.3
7
9
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2
Document Number: 72950
19-Apr-04