SI8429DB Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 1.2V (G-S) MOSFET

SPICE Device Model Si8429DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Drain-Source On-State Resistance^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
r_DS(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_GS = −4.5 V, I_D = −1 A
V_GS = −2.5 V, I_D = −1 A
V_GS = −1.8 V, I_D = −1 A
V_GS = −1.5 V, I_D = −1 A
V_GS = −1.2 V, I_D = −1 A
V_DS = −4 V, I_D = −1 A
I_S = −1 A, V_GS = 0 V
V_DS = −4 V, V_GS = 0 V, f = 1 MHz
V_DS = −4 V, V_GS = −5 V, I_D = −1 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −4 V, V_GS = −4.5 V, I_D = −1 A
Simulated Measured
Data
Data
0.60
0.031
0.036
0.043
0.049
0.066
10
− 0.60
0.029
0.035
0.043
0.051
0.065
− 0.70
1793
588
379
18
16
1.8
3.7
1640
590
380
24
21
1.8
3.7
Unit
V
A
Ω
S
V
pF
nC
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2
Document Number: 69660
S-80009Rev. A, 21-Jan-08