SI8413DB Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si8413DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −1 A
V_GS = −2.5 V, I_D = −1 A
V_DS = −10 V, I_D = −1 A
I_S = −1 A, V_GS = 0 V
V_DS = −10 V, V_GS = −4.5 V, I_D = −1 A
V_DD = −10 V, R_L = 10 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.91
103
0.038
0.053
7.4
−0.78
0.0393
0.052
7.4
−0.80
11
14
1.7
1.7
5.1
5.1
55
31
40
50
186
105
47
90
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 72978
S-52398Rev. B, 21-Nov-05