SI8409DB_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si8409DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^aa
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −1 A
V_GS = −2.5 V, I_D = −1 A
V_DS = −10 V, I_D = −1 A
I_S = −1 A, V_GS = 0 V
V_DS = −10 V, V_GS = −4.5 V, I_D = −1 A
Simulated Measured
Data
Data
0.90
107
0.038
0.053
8
−0.78
0.038
0.052
6.4
−0.80
9
17
2.2
2.2
5.7
5.7
Unit
V
A
Ω
S
V
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 73188
S-52398Rev. B, 21-Nov-05