SI8402DB_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – 20-V N-Channel 1.8-V (G-S) MOSFET

SPICE Device Model Si8402DB
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 1 A
V_GS = 2.5 V, I_D = 1 A
V_GS = 1.8 V, I_D = 1 A
V_DS = 10 V, I_D = 1 A
I_S = 1 A, V_GS = 0 V
V_DS = 6 V, V_GS = 4.5 V, I_D = 1 A
V_DD = 6 V, R_L = 6 Ω
I_D ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.40
144
0.029
0.032
0.035
14
0.67
0.031
0.033
0.035
12
0.73
14.6
17
2
2
2.1
2.1
33
30
37
45
77
45
16
75
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72681
S-60410Rev. B, 20-Mar-06