SI7945DP-T1-E3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

Si7945DP
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
- 1.0
- 3.0
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 55 °C
-1
µA
-5
On-State Drain Current^a
I_D(on)
V_DS ≤ - 5 V, V_GS = - 10 V
- 30
A
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = - 10 V, I_D = - 10.9 A
V_GS = - 4.5 V, I_D = - 8.8 A
0.016 0.020
Ω
0.025 0.031
Forward Transconductance^a
g_fs
V_DS = - 15 V, I_D = - 10.9 A
26
S
Diode Forward Voltage^a
V_SD
I_S = - 2.9 A, V_GS = 0 V
- 0.8
- 1.2
V
Dynamic^b
Total Gate Charge
Q_g
49
74
Gate-Source Charge
Q_gs
V_DS = - 15 V, V_GS = - 10 V, I_D = - 10.9 A
7.3
nC
Gate-Drain Charge
Q_gd
13
Turn-On Delay Time
t_d(on)
15
25
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 15 V, R_L = 15 Ω
I_D ≅ - 1 A, V_GEN = - 10 V, R_g = 6 Ω
15
25
130
200
ns
Fall Time
t_f
80
120
Source-Drain Reverse Recovery Time
t_rr
I_F = - 2.9 A, dI/dt = 100 A/µs
85
130
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 V thru 4 V
24
24
18
18
12
6
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
T_C = 125 °C
6
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72090
S09-0227-Rev. D, 09-Feb-09