SI7942DP_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual N-Channel 100-V (D-S) MOSFET

SPICE Device Model Si7942DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 5.9 A
V_GS = 6 V, I_D = 5.5 A
V_DS = 15 V, I_D = 5.9 A
I_S = 2.9 A, V_GS = 0 V
V_DS = 50 V, V_GS = 10 V, I_D = 5.9 A
V_DD = 50 V, R_L = 50 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω
I_F = 2.9 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.5
111
0.042
0.048
12
0.82
0.041
0.048
14
0.77
17
16
3.8
3.8
5.5
5.5
12
15
17
15
22
35
23
20
40
50
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72204
S-60261Rev. B, 27-Feb-06