SI7941DP Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si7941DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = − 250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −9 A
V_GS = −4.5 V, I_D = −5 A
V_DS = −15 V, I_D = −2.5 A
I_S = −2.9 A, V_GS = 0 V
V_DS = −15 V, V_GS = −10 V, I_D = −9 A
V_DD = −15 V, R_L = 15 Ω
I_D ≅ −1 A, V_GEN = −10 V, R_G = 6 Ω
I_F = −2.9 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.9
205
0.022
0.033
10
−0.82
0.022
0.032
14
−0.80
41
42
8.5
8.5
7.5
7.5
20
18
28
29
32
65
58
27
40
50
Unit
V
A
Ω
S
V
nC
ns
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Document Number: 71669
31-May-04