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SI7923DN_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET | |||
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SPICE Device Model Si7923DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â10 V
VGS = â10 V, ID = â6.4 A
VGS = â4.5 V, ID = â5 A
VDS = â15 V, ID = â6.4 A
IS = â2.3 A, VGS = 0 V
VDS = â15 V, VGS = â10 V, ID = â6.4 A
VDD = â15 V, RL = 15 â¦
ID â
â1 A, VGEN = â10 V, RG = 6 â¦
Simulated Measured
Data
Data
2
24
0.038
0.059
13
â0.82
0.038
0.060
13
â0.80
13
14
2.4
2.4
3.8
3.8
11
10
8
12
40
38
12
28
Unit
V
A
â¦
S
V
nC
ns
www.vishay.com
2
Document Number: 72682
S-60244Rev. B, 20-Feb-06
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