SI7858DP Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 12-V (D-S) MOSFET

SPICE Device Model Si7858DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
VGS(th)
ID(on)
Drain-Source On-State Resistance^a
rDS(on)
Forward Transconductance^a
gfs
Diode Forward Voltage^a
VSD
Dynamic^b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250µA
VDS ≥ 5V, VGS = 4.5V
VGS = 4.5V, ID = 25A
VGS = 2.5V, ID =20A
VDS = 6V, ID = 25A
IS = 2.9A, VGS = 0V
VDS = 6V, VGS = 4.5V, ID = 25A
VDD = 6V, RL = 6Ω
ID ≅ 1A, VGEN = 4.5V, RG = 6Ω
IF = 2.9A, di/dt = 100 A/µs
Simulated Measured
Data
Data
0.91
1265
0.0019
0.0031
142
0.76
0.0024
0.0031
130
0.75
42
40
6.7
6.7
9.2
9.2
41
40
58
40
66
140
118
70
39
50
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 71024
20-May-02