SI7840BDP Datasheet, PDF (2/3 Pages) Vishay Siliconix – Si7840BDP vs. Si7840DP Specification Comparison

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Comp_Sle_Pte_{ICE Device Model Si7840BDP}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current ^a
Drain-Source On-State Resistance ^a
VGS(th)
ID(on)
rDS(on)
Forward Transconductance ^a
gfs
Diode Forward Voltage ^a
VSD
Dynamic ^b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = 250 µA
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 16.5 A
VGS = 4.5 V, ID = 13 A
VDS = 15 V, ID = 16.5 A
IS = 3.7 A, VGS = 0 V
VDS = 15 V, VGS = 4.5 V, ID = 16.5 A
Simulated Measured
Data
Data
1.8
684
0.0070
0.0084
17
0.74
0.0070
0.0084
60
0.75
13
14
6
6
3.5
3.5
Unit
V
A
Ω
S
V
nC
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Document Number: 73244
04-Dec-04