SI7664DP Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SPICE Device Model Si7664DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 20 A
V_GS = 4.5 V, I_D = 20 A
V_DS = 15 V, I_D = 20 A
I_S = 5 A
V_DS = 15 V, V_GS = 4.5 V, I_D = 20 A
Simulated Measured
Data
Data
1.1
1818
0.0026
0.0029
21
0.75
0.0025
0.0029
108
0.73
40
38
10.5
10.5
5.5
5.5
Unit
V
A
Ω
S
V
nC
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2
Document Number: 74149
S-60180Rev. A, 13-Feb-06