SI7601DN Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si7601DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −11 A
V_GS = −2.5 V, I_D = −8.9 A
V_DS = −10 V, I_D = −11 A
I_S = −6 A
V_DS = −10 V, V_GS = 0 V, f = 1 MHz
V_DS = −10 V, V_GS = −5 V, I_D = −11 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = −10 V, V_GS = −4.5 V, I_D = −11 A
Q_gd
Simulated Measured
Data
Data
1.1
187
0.013
0.021
48
−0.85
0.016
0.025
31.7
−0.80
1613
491
382
18
17
4.1
4.8
1870
490
460
18
16.2
4.1
4.8
Unit
V
A
Ω
S
V
pF
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 74145
S-70044Rev. B, 22-Jan-07