|
SI7465DP Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET | |||
|
◁ |
SPICE Device Model Si7465DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â10 V
VGS = â10 V, ID = â5 A
VGS = â4.5 V, ID = â4.5 A
VDS = â15 V, ID = â5 A
IS = â2.9 A, VGS = 0 V
VDS = â30 V, VGS = â10 V, ID = â5 A
Simulated Measured
Data
Data
2
99
0.050
0.063
15
â0.83
0.051
0.064
16
â0.80
24
26
4.5
4.5
7
7
Unit
V
A
â¦
S
V
nC
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73148
S-52519Rev. B, 12-Dec-05
|
▷ |