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SI7463DP Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – P-Channel 40-V (D-S) MOSFET | |||
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SPICE Device Model Si7463DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â10 V
VGS = â10 V, ID = â18.6 A
VGS = â4.5 V, ID = â15 A
VDS = â15 V, ID = â18.6 A
IS = â4.5 A, VGS = 0 V
VDS = â15 V, VGS = â10 V, ID = â18.6 A
VDD = â20 V, RL = 20 â¦
ID â
â1 A, VGEN = â10 V, RG = 6 â¦
Simulated Measured
Data
Data
1.8
662
0.0075
0.0095
66
â0.84
0.0075
0.011
50
â0.80
102
121
19.2
19.2
30.3
30.3
30
20
28
25
192
200
75
100
Unit
V
A
â¦
S
V
nC
ns
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 72546
S-52521Rev. B, 12-Dec-05
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