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SI7439DP_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET | |||
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SPICE Device Model Si7439DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
VDS = VGS, ID = â250 µA
VDS = â10 V, VGS = â1 0V
VGS = â10 V, ID = â5.2 A
VGS = â6 V, ID = â5 A
VDS = â15 V, ID = â5.2 A
IS = â4.2 A, VGS = 0 V
VDS = â75 V, VGS = â10 V, ID = â5.2 A
Simulated Measured
Data
Data
2.9
66
0.075
0.080
17
â0.84
0.073
0.077
19
â0.78
89
88
17.5
17.5
26.5
26.5
Unit
V
A
â¦
S
V
nC
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73080
S-52521Rev. B, 12-Dec-05
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