SI7430DP_07 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 150-V (D-S) MOSFET

SPICE Device Model Si7430DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS = 10 V, V_GS = 10 V
V_GS = 10 V, I_D = 5 A
V_GS = 8 V, I_D = 5 A
V_DS = 15 V, I_D = 5 A
I_S = 2.6 A
V_DS = 50 V, V_GS = 0 V, f = 1 MHz
V_DS = 75 V, V_GS = 10 V, I_D = 5 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 75 V, V_GS = 8 V, I_D = 5 A
Simulated Measured
Data
Data
3
136
0.036
0.037
19
0.73
0.036
0.0375
23
0.77
1725
165
34
28
24
8
6.5
1735
160
37
28.5
23
8
6.5
Unit
V
A
Ω
S
V
pF
nC
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2
Document Number: 74191
S-71183Rev. A, 18-Jun-07