SI7423DN Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si7423DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −11.7 A
V_GS = −4.5 V, I_D = −9 A
V_DS = −15 V, I_D = −11.7 A
I_S = −3.2 A, V_GS = 0 V
V_DS = −15 V, V_GS = −10 V, I_D = −11.7 A
V_DD = −15 V, R_L = 15 Ω
I_D ≅ −1 A, V_GEN = −10 V, R_G = 6 Ω
Simulated Measured
Data
Data
1.8
60
0.014
0.023
29
−0.83
0.014
0.023
29
−0.76
34
37.5
5.8
5.8
9.6
9.6
15
11
11
10
72
74
25
50
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
www.vishay.com
2
Document Number: 72636
24-May-04