SI7401DN Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si7401DN
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current ^a
Drain-Source On-State Resistance^a
VGS(t h)
I D(on)
rDS(on)
Forward Transconductance^a
gfs
Diode Forward Voltage^a
VSD
Dynamic ^b
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
t d(on)
Rise Time
tr
Turn-Off Delay Time
t d(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
t rr
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = − 2mA
VDS = − 5V, VGS = − 4.5 V
VGS = − 4.5V, I D = − 11A
VGS = − 2.5V, I D = − 9.8 A
VGS = − 1.8V, I D = − 2A
VDS = − 15V, ID = − 11A
IS = − 3.2A, VGS = 0V
VDS = − 10V, VGS = − 4.5V, ID = − 11A
VDD = − 10V, RL = 10Ω
ID ≅ − 1A, VGEN = − 4.5V, R G = 6Ω
IF = − 3.2A, di/dt = 100 A/µs
Simulated Measured
Data
Data
0.73
171
0.015
0.021
0.027
33
- 0.83
0.017
0.022
0.027
31
- 0.8
33
29
5.9
5.9
5.2
5.2
34
23
42
45
52
130
78
95
30
30
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 71638
31-May-01