SI7392ADP Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel Reduced Qg, Fast Switching WFET

SPICE Device Model Si7392ADP
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 12.5A
V_GS = 4.5 V, I_D = 10A
V_DS = 15 V, I_D = 12.5A
I_S = 2.7A
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 12.5A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 12.5A
Simulated Measured
Data
Data
1.9
686
0.006
0.009
45
0.73
0.006
0.009
46
0.73
1626
360
136
22
11
3.7
3.1
1465
360
150
25
12
3.7
3.1
Unit
V
A
Ω
S
V
pF
nC
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Document Number: 73517
S-61151Rev. B, 26-Jun-06