SI7309DN Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

SPICE Device Model Si7309DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 μA
V_DS ≥ −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −3.9 A
V_GS = −4.5 V, I_D = −3.5 A
V_DS = −15 V, I_D = −3.9 A
I_S = −1.3 A, V_GS = 0 V
V_DS = −30V, V_GS = 0 V, f = 1 MHz
V_DS = −30 V, V_GS = −10 V, I_D = −3.9 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = −30 V, V_GS = −4.5 V, I_D = −3.9 A
Q_gd
Simulated Measured
Data
Data
1.9
51
0.093
0.121
6
−0.79
0.092
0.120
10
−0.80
634
600
70
70
55
50
13
14.5
7.5
7.5
2.2
2.2
3.7
3.7
Unit
V
A
Ω
S
V
pF
nC
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73457
S-51296⎯Rev. A, 27-Jul-05