SI7113DN Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 100-V (D-S) MOSFET

SPICE Device Model Si7113DN
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −4 A
V_GS = −4.5 V, I_D = −3 A
V_DS = −15 V, I_D = −4 A
I_S = −3 A, V_GS = 0 V
V_DS = −50 V, V_GS = 0 V, f = 1 MHz
V_DS = −50 V, V_GS = −4.5 V, I_D = −4 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −50 V, V_GS = −10 V, I_D = −4 A
Simulated Measured
Data
Data
2.1
46
0.109
0.120
13
−0.83
0.108
0.119
25
−0.80
1779
85
62
30
16.4
4.7
8
1480
80
60
35
16.5
4.7
8
Unit
V
A
Ω
S
V
pF
nC
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2
Document Number: 74171
S-61262Rev. A, 24-Jul-06