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SI6981DQ_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET | |||
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SPICE Device Model Si6981DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
VGS(th)
ID(on)
rDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = â300 µA
VDS = â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â4.8 A
VGS = â2.5 V, ID = â4.2 A
VGS = â1.8 V, ID = â3.5 A
VDS = â5 V, ID = â4.8 A
IS = â1 A, VGS = 0 V
VDS = â10 V, VGS = â4.5 V, ID = â4.8 A
VDD = â10 V, RL = 10 â¦
ID â
â1 A, VGEN = â4.5 V, RG = 6 â¦
Simulated Measured
Data
Data
0.80
205
0.027
0.034
0.047
19
â0.78
0.026
0.034
0.046
17
â0.65
13.5
15
2.4
2.4
3.8
3.8
37
35
55
55
117
120
31
52
Unit
V
A
â¦
S
V
nC
ns
www.vishay.com
2
Document Number: 72328
S-60146Rev. B, 13-Feb-06
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