SI6933DQ Datasheet, PDF (2/3 Pages) Fairchild Semiconductor – Dual 30V P-Channel PowerTrench MOSFET

SPICE Device Model Si6933DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = − 250µA
VDS > − 5V, VGS = − 10V
VGS = − 10V, ID = − 3.5A
VGS = − 4.5V, ID = − 2.5A
VDS = − 15V, ID = − 3.5A
IS = − 1.25A, VGS = 0V
VDS = − 15V, VGS = − 10V, ID = − 3.5A
VDD = − 15V, RL = 15Ω
ID ≅ − 1A, VGEN = − 10V, RG = 6Ω
IF = − 1.25A, di/dt = 100A/µs
Simulated Measured
Data
Data
2.13
132
0.034
0.054
9.6
- 0.78
0.035
0.062
7.2
- 0.77
18
17
4.4
4.4
3.1
3.1
14
13
7.8
10
21
33
11
10
30
30
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 71734
12-Oct-01