SI6913DQ_04 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

SPICE Device Model Si6913DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −400 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −5.8 A
V_GS = −2.5 V, I_D = −5 A
V_GS = −1.8 V, I_D = −4.4 A
V_DS = −5 V, I_D = −5.8 A
I_S = −1 A, V_GS = 0 V
V_DS = −6 V, V_GS = −4.5 V, I_D = −5.8 A
V_DD = −6 V, R_L = 6 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.81
196
0.017
0.021
0.029
27
−0.78
0.016
0.021
0.029
25
−0.61
19
18.5
2.7
2.7
5
5
58
45
39
80
134
130
35
80
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
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2
Document Number: 72529
23-May-04