SI6901DQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – Bi-Directional P-Channel 12-V (D-S) MOSFET

SPICE Device Model Si6901DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −5.4 A
V_GS = −2.5 V, I_D = −4.8 A
V_GS = −1.8 V, I_D = −3.5 A
V_DS = −10 V, I_D = −5.4 A
V_DS = − 6 V, V_GS = − 4.5 V, I_D = − 5.4 A
V_DD = − 6 V, R_L = 6 Ω
I_D ≅ − 1 A, V_GEN = − 4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.66
133
0.027
0.034
0.045
21
0.026
0.034
0.046
30
64
80
10.5
10.5
34
34
91
110
230
310
354
210
46
270
Unit
V
A
Ω
S
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
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2
Document Number: 72915
23-May-04