SI6866BDQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

SPICE Device Model Si6866BDQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS = 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 6 A
V_GS = 2.5 V, I_D = 4.9 A
V_DS = 10 V, I_D = 6 A
I_S = 1.5 A, V_GS = 0 V
V_DS = 10 V, V_GS = 4.5 V, I_D = 6 A
V_DD = 10 V, R_L = 10 Ω
I_D ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
1.1
115
0.020
0.032
21
0.80
0.022
0.033
25
0.75
7.2
7.5
1.4
1.4
2.2
2.2
26
45
38
53
30
30
10
13
Unit
V
A
Ω
V
nC
ns
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2
Document Number: 72703
S-60146Rev. B, 13-Feb-06