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SI6820DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel, Reduced Qg, MOSFET with Schottky Diode
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Si6820DQ
Vishay Siliconix
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
VDS = VGS, ID = 250 mA
0.6
IGSS
VDS = 0 V, VGS = "12 V
IDSS
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55_C
ID(on)
VDS w 5 V, VGS = 4.5 V
6
rDS(on)
VGS = 4.5 V, ID = 1.9 A
VGS = 3.0 V, ID = 1.5 A
gfs
VDS = 15 V, ID = 1.9 A
VSD
IS = 1.0 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 3.5 V, VGS = 4.5 V, ID = 0.3 A
VDD = 3.5 V, RL = 11.5 W
ID ^ 0.3 A, VGEN = 4.5 V, RG = 6 W
IF = 1.0 A, di/dt = 100 A/ms
Typ
0.085
0.115
5
0.77
2.1
0.43
0.30
8
10
12
6
31
Max Unit
V
"100
nA
1
mA
25
A
0.160
W
0.260
S
1.2
V
3.5
nC
20
20
25
ns
15
60
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Forward Voltage Drop
VF
Maximum Reverse Leakage Current
Irm
Junction Capacitance
CT
IF = 1 A
IF = 1 A, TJ = 125_C
Vr = 20 V
Vr = 20 V, TJ = 75_C
Vr = 20 V, TJ = 125_C
Vr = 10 V
Typ
0.45
0.36
0.003
0.1
2
62
Max
0.50
0.42
0.100
1
10
Unit
V
mA
pF
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 70790
S-56936—Rev. C, 23-Nov-98
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