SI6801DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – SPICE Device Model Si6801DQ

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Comp_Sle_Pte_{ICE Device Model Si6801DQ}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
VGS(th)
ID(on)
rDS(on)
gfs
VSD
VDS = V, VGS, ID = 250 µA
VDS = V, VGS, ID = −250 µA
VDS 5 V, VGS = 4.5 V
VDS = −5 V, VGS = −4.5 V
VGS = 4.5 V, ID = 1.9 A
VGS = −4.5 V, ID = −1.7 A
VGS = 3 V, ID = 1.5 A
VGS = −3 V, ID = −1.3 A
VDS = 15 V, ID = 1.9 A
VDS = −15 V, ID = −1.7 A
IS = 1 A, VGS = 0 V
IS = −1 V, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
N-Channel
VDS = 3.5 V, VGS = 4.5 V, ID = 0.3 A
Qgs
P-Channel
VDS = −3.5 V, VGS = −4.5 V, ID = −0.3 A
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
N-Channel
VDD = 3.5 V, RL = 11.5 Ω
ID ≅ 0.3 A, VGEN = 4.5 V, RG = 6 Ω
P-Channel
VDD = −3.5 V, RL = 11.5 Ω
ID ≅ −0.3 A, VGEN = −4.5 V, RG = 6 Ω
IF = 1 A, di/dt = 100 A/µs
IF = −1 A, di/dt = 100 A/µs
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typical
1.02
1.15
23
18
0.112
0.154
0.149
0.217
5
4.1
0.77
−0.77
1.6
3
0.41
0.76
0.26
0.70
5.2
6
6.2
10
9
11
15
22
31
30
Unit
V
A
Ω
S
V
nC
ns
www.vishay.com
2
Document Number: 71023
22-May-04