SI6463BDQ_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

SPICE Device Model
SVi6s4h6a3yBSDilQiconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = − 250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −7.4 A
V_GS = −2.5 V, I_D = −6.3 A
V_GS = −1.8 V, I_D = −5.5 A
V_DS = −15 V, I_D = −7.4 A
I_S = −1.3 A, V_GS = 0 V
V_DS = −10 V, V_GS = −5 V, I_D = −7.4 A
V_DD = −10 V, R_L = 15 Ω
I_D ≅ −1 A, V_GEN = −4.5 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.71
250
0.011
0.015
0.020
35
−0.79
0.011
0.015
0.020
34
−0.64
31
40
5.2
5.2
8
8
33
35
33
40
126
190
46
90
Unit
V
A
Ω
S
V
nC
ns
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2
Document Number: 72137
S-52526Rev. B, 12-Dec-05