SI6433BDQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

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Comp_Sle_Pte_{ICE Device Model Si6433BDQ}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = −250 µA
VDS = −5 V, VGS = −4.5 V
VGS = −4.5 V, ID = −4.8 A
VGS = −2.5 V, ID = −3.6 A
VDS = −5 V, ID = −4.8 A
IS = −1.35 A, VGS = 0 V
VDS = −6 V, VGS = −4.5 V, ID = −4.8 A
VDD = −6 V, RL = 6 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
Simulated Measured
Data
Data
1.2
75
0.031
0.050
13
−0.79
0.032
0.053
14
−0.77
8.7
10
1.8
1.8
3
3
43
45
26
60
67
70
18
35
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
www.vishay.com
2
Document Number: 72565
21-May-04