SI6423DQ_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

SPICE Device Model Si6423DQ
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −9.5 A
V_GS = −2.5 V, I_D = −8.5 A
V_GS = −1.8 V, I_D = −7.5 A
V_DS = −15 V, I_D = −9.5 A
I_S = −1.3 A, V_GS = 0 V
V_DS = −6 V, V_GS = −5 V, I_D = −9.5 A
V_DD = −6 V, R_L = 6 Ω
I_D ≅ −1 A, V_GEN = −10 V, R_G = 6 Ω
Simulated Measured
Data
Data
0.73
468
0.0069
0.0085
0.011
30
−0.80
0.0068
0.0085
0.0112
45
−0.58
59
74
9
9
19
19
53
50
58
75
270
270
102
200
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 72327
S-52526Rev. B, 12-Dec-05