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SI6415DQ Datasheet, PDF (2/4 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET | |||
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SPICE Device Model Si6415DQ
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â1 V
VGS = â10 V, ID = â6.5 A
VGS = â4.5 V, ID = â5.2 A
VDS = â15 V, ID = â6.5 A
IS = â1.5 A, VGS = 0 V
VDS = â15 V, VGS = â10 V, ID = â6.5 A
VDD = â15 V, RL = 15 â¦
ID â
â1 A, VGEN = â10 V, RG = 6 â¦
IF = â1.5 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
1.9
276
0.016
0.022
22
â0.83
0.015
0.022
18.5
â0.75
46
47
9.5
9.5
8
8
22
16
20
17
62
73
65
31
41
40
Unit
V
A
â¦
S
V
nC
ns
Notes
a. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71864
S-60075Rev. B, 23-Jan-06
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