SI6413DQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

Si6413DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -400 mA
V_DS = 0 V, V_GS = "8 V
V_DS = -16 V, V_GS = 0 V
V_DS = -16 V, V_GS = 0 V, T_J = 70_C
V_DS -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -8.8 A
V_GS = -2.5 V, I_D = -7.6 A
V_GS = -1.8 V, I_D = -6.8 A
V_DS = -15 V, I_D = -8.8 A
I_S = -1.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = -10 V, V_GS = -5 V, I_D = -8.8 A
V_DD = -10 V, R_L = 10 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -1.3 A, di/dt = 100 A/ms
Min Typ Max Unit
-0.40
-0.8
V
"100
nA
-1
mA
-10
-20
A
0.008
0.010
0.010
0.013
W
0.013
0.016
45
S
-0.58
-1.1
V
69
105
9.5
nC
15.5
55
85
120
200
305
470
ns
160
250
90
150
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2 V
1.5 V
24
Transfer Characteristics
30
24
18
18
12
6
0
0
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2
1.0 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
12
T_C = 125_C
6
25_C
-55 _C
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_GS - Gate-to-Source Voltage (V)
Document Number: 72084
S-22384—Rev. A, 30-Dec-02