SI6405DQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

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Comp_Sle_Pte_{ICE Device Model Si6405DQ}
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = −250 µA
VDS = −5 V, VGS = −4.5 V
VGS = −4.5 V, ID = −8.6 A
VGS = −2.5 V, ID = −7.6 A
VGS = − 1.8 V, ID = −6.7 A
VDS = −15 V, ID = − 8.6 A
IS = −1.5 A, VGS = 0 V
VDS = −10 V, VGS = −4.5 V, ID = −8.6 A
VDD = −10 V, RL = 10 Ω
ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω
Simulated Measured
Data
Data
0.78
298
0.011
0.0143
0.0201
32
−0.79
0.011
0.0145
0.0185
35
−0.62
36
42
4.6
4.6
12.7
12.7
67
50
67
105
190
185
61
135
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
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2
Document Number: 72715
21-May-04