SI5943DU Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

SPICE Device Model Si5943DU
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250 µA
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −3.6 A
V_GS = −2.5 V, I_D = −3.1 A
V_GS = −1.8 V, I_D = −0.83 A
V_DS = −6 V, I_D = −3.6 A
I_S = −4 A
V_DS = −6 V, V_GS = 0 V, f = 1 MHz
V_DS = −6 V, V_GS = −8 V, I_D = −5A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = −6 V, V_GS = −4.5 V, I_D = −5 A
Q_gd
Simulated Measured
Data
Data
0.75
73
0.052
0.075
0.106
18
−0.85
0.053
0.073
0.098
11
−0.80
624
460
169
170
118
115
8
10
5
6
0.90
0.90
1.65
1.65
Unit
V
A
Ω
S
V
pF
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 74177
S-61262Rev. A, 24-Jul-06