SI5941DU Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 8-V (D-S) MOSFET

SPICE Device Model Si5941DU
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = −250μA
V_DS ≤ −5V, V_GS = −4.5V
V_GS = −4.5V, I_D = −3.6 A
V_GS = −2.5V, I_D = −2.9 Α
V_GS = −1.8V, I_D = −0.66 Α
V_DS = −4V, I_D = −3.6 A
I_S = −1A, V_GS = 0 V
V_DS = −4 V, V_GS = 0 V, f = 1 MHz
V_DS = −4 V, V_GS = −8 V, I_D = −5 A
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −4 V, V_GS = −4.5 V, I_D = −5 A
Simulated Measured
Data
Data
0.80
54
0.058
0.083
0.114
9
−0.80
0.055
0.086
0.125
8
−0.80
589
700
103
325
57
220
9.5
11
5.7
6.5
1.3
1.3
1.5
1.5
Unit
V
A
Ω
S
V
pF
nC
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Document Number: 74132
S-52019⎯Rev. A, 03-Oct-05