SI5915DC Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

Si5915DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = --250 mA
V_DS = 0 V, V_GS = 8 V
V_DS = --6.4 V, V_GS = 0 V
V_DS = --6.4 V, V_GS = 0 V, T_J = 85_C
V_DS  --5 V, V_GS = --4.5 V
V_GS = --4.5 V, I_D = --3.4 A
V_GS = --2.5 V, I_D = --2.7 A
V_GS = --1.8 V, I_D = --1 A
V_DS = --5 V, I_D = --3.4 A
I_S = --0.9 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = --4 V, V_GS = --4.5 V, I_D = --3.4 A
V_DD = --4 V, R_L = 4 Ω
I_D ≅ --1 A, V_GEN = --4.5 V, R_G = 6 Ω
I_F = --0.9 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
--0.45
V
100
nA
--1
--5
mA
--10
A
0.058
0.070
0.090
0.108
Ω
0.131
0.162
8
S
--0.8
--1.2
V
5.9
9
1.3
nC
1.4
20
30
70
110
35
55
ns
35
55
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V_GS = 5 thru 2.5 V
8
2V
6
4
1.5 V
2
0
0
1
2
3
4
5
V_DS -- Drain-to-Source Voltage (V)
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2-2
10
8
6
4
2
0
0.0
Transfer Characteristics
T_C = --55_C
25_C
125_C
0.5
1.0
1.5
2.0
2.5
V_GS -- Gate-to-Source Voltage (V)
Document Number: 70693
S-21251—Rev. B, 05-Aug-02