SI5908DC_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

SPICE Device Model Si5908DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Forward Voltage^a
V_SD
Dynamic^b
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = V_GS, I_D = 250 µA
V_DS ≥ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 4.4 A
V_GS = 2.5 V, I_D = 4.1 A
V_GS = 1.8 V, I_D = 1.9 A
V_DS = 10 V, I_D = 4.4 A
I_S = 0.9 A, V_GS = 0 V
V_DS = 10 V, V_GS = 4.5 V, I_D = 4.4 A
Simulated Measured
Data
Data
0.53
119
0.030
0.033
0.037
26
0.71
0.032
0.036
0.042
22
0.80
5.1
5
0.85
0.85
1
1
Unit
V
A
Ω
S
V
nC
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2
Document Number: 73096
S-60073Rev. B, 23-Jan-06