SI5509DC Datasheet, PDF (2/4 Pages) Vishay Siliconix – N- and P-Channel 20-V (D-S) MOSFET

SPICE Device Model Si5509DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
V_GS(th)
I_D(on)
Drain-Source On-State Resistance^a
r_DS(on)
Forward Transconductance^a
g_fs
Diode Forward Voltage^a
V_SD
Dynamic^b
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = −250 µA
V_DS ≤ 5 V, V_GS = 4.5 V
V_DS ≤ −5 V, V_GS = −4.5 V
V_GS = 4.5 V, I_D = 5 A
V_GS = −4.5 V, I_D = −3.9 A
V_GS = 2.5 V, I_D = 3.9 A
V_GS = −2.5 V, I_D = −2.9 A
V_DS = 10 V, I_D = 5 A
V_DS = − 10 V, I_D = −3.9 A
I_S = 2.4 A, V_GS = 0 V
I_S = −1.5 A, V_GS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
N-Channel
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
C_oss
P-Channel
V_DS = − 10 V, V_GS = 0 V, f = 1 MHz
C_rss
Total Gate Charge
V_DS = 10V, V_GS = 5V, I_D = 4 A
Q_g
V_DS = −10V, V_GS = −5V, I_D = −3.9 A
Gate-Source Charge
Gate-Source Charge
N-Channel
V_DS = 10 V, V_GS = 4.5V, I_D = 4 A
Q_gs
P-Channel
V_DS = −10V, V_GS = −4.5V, I_D = −3.9 A
Q_gs
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
N-Ch
1.2
V
P-Ch
1.1
N-Ch
46
A
P-Ch
40
N-Ch
0.041
0.043
P-Ch
N-Ch
0.066
0.072
0.074
Ω
0.068
P-Ch
0.111
0.128
N-Ch
12
P-Ch
12
10.4
S
8.2
N-Ch
0.73
0.80
V
P-Ch
0.80
- 0.80
N-Ch
506
P-Ch
377
N-Ch
80
P-Ch
92
N-Ch
28
P-Ch
61
N-Ch
4.2
P-Ch
3.6
N-Ch
3.8
P-Ch
3.3
N-Ch
0.9
P-Ch
0.7
N-Ch
0.95
P-Ch
1.25
455
300
85
pF
95
50
65
4.4
4.1
3.8
3.9
nC
0.9
0.7
0.95
1.25
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Document Number: 74166
S-60411Rev. A, 20-Mar-06