SI5486DUV Datasheet, PDF (2/3 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

SPICE Device Model Si5486DU
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
V_GS(th)
I_D(on)
R_DS(on)
g_fs
V_SD
C_iss
C_oss
C_rss
Q_g
V_DS = V_GS, I_D = 250 µA
V_DS ≤ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 7.7 A
V_GS = 2.5 V, I_D = 7.3 A
V_GS = 1.8 V, I_D = 4.8 A
V_DS = 10 V, I_D = 7.7 A
I_S = 9.1 A
V_DS = 10 V, V_GS = 0 V, f = 1 MHz
V_DS = 10 V, V_GS = 8 V, I_D = 9.3 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = 10 V, V_GS = 4.5 V, I_D = 9.3 A
Q_gd
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
Simulated Measured
Data
Data
Unit
0.50
V
305
A
0.012
0.012
Ω
0.014
0.014
0.017
0.017
30
46
S
0.72
0.85
V
2320
2100
311
310
pF
139
180
33
36
19
21
nC
3.3
3.3
3.1
3.1
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2
Document Number: 74181
S-60546Rev. A, 10-Apr-06