SI5461EDC Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si5461EDC
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = --250 mA
V_DS = 0 V, V_GS = 4.5 V
V_DS = --16 V, V_GS = 0 V
V_DS = --16 V, V_GS = 0 V, T_J = 85_C
V_DS --5 V, V_GS = --4.5 V
V_GS = --4.5 V, I_D = --5.0 A
V_GS = --2.5 V, I_D = --4.0 A
V_GS = --1.8 V, I_D = --2 A
V_DS = --5 V, I_D = --5.0 A
I_S = --1.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.m
b. Guaranteed by design, not subject to production testing.
V_DS = --10 V, V_GS = --4.5 V, I_D = --5.0 A
V_DD = --10 V, R_L = 10 Ω
I_D ≅ --1 A, V_GEN = --4.5 V, R_G = 6 Ω
Min
Typ
Max Unit
--0.45
V
1.5
--1
mA
--5
--20
A
0.037
0.045
0.050
0.060
Ω
0.066
0.082
12
S
--0.7
--1.2
V
12.5
20
2.0
nC
4.0
2.5
3.5
4.5
8.0
27
40
mS
15
25
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 4.5 thru 2.5 V
16
2V
16
12
12
8
8
1.5 V
4
4
0.5 V
1V
0
0
0
2
4
6
8
10
0.0
V_DS -- Drain-to-Source Voltage (V)
Transfer Characteristics
T_C = --55_C
25_C
125_C
0.5
1.0
1.5
2.0
2.5
V_GS -- Gate-to-Source Voltage (V)
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2-2
Document Number: 71413
S-21251—Rev. C, 05-Aug-02