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SI5449DC Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
Si5449DC
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = --250 mA
VDS = 0 V, VGS = 12 V
VDS = --24 V, VGS = 0 V
VDS = --24 V, VGS = 0 V, TJ = 85_C
VDS ≤ --5 V, VGS = --4.5 V
VGS = --4.5 V, ID = --3.1 A
VGS = --2.5 V, ID = --1 A
VDS = --10 V, ID = --3.1 A
IS = --1.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
VDS = --15 V, VGS = --4.5 V, ID = --3.1 A
VDD = --15 V, RL = 15 Ω
ID ≅ --1 A, VGEN = --4.5 V, RG = 6 Ω
IF = --1.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
--0.6
V
100
nA
--1
--5
mA
--15
A
0.071
0.085
0.112
0.135
Ω
8.5
S
--0.8
--1.2
V
7.2
11
2.2
nC
1.7
13
25
14
30
35
70
ms
20
40
40
60
ns
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
15
VGS = 5 thru 3.5 V
12
Output Characteristics
3V
9
2.5 V
6
3
2V
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VDS -- Drain-to-Source Voltage (V)
Transfer Characteristics
15
TC = --55_C
12
25_C
9
125_C
6
3
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS -- Gate-to-Source Voltage (V)
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2
Document Number: 71327
S-21251—Rev. B, 05-Aug-02