SI5435DC Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si5435DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = --250 mA
V_DS = 0 V, V_GS = 20 V
V_DS = --24 V, V_GS = 0 V
V_DS = --24 V, V_GS = 0 V, T_J = 85_C
V_DS --5 V, V_GS = --10 V
V_GS = --10 V, I_D = --4.1 A
V_GS = --4.5 V, I_D = --3.1 A
V_DS = --15 V, I_D = --4.1 A
I_S = --1.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = --15 V, V_GS = --10 V, I_D = --4.1 A
V_DD = --15 V, R_L = 15 Ω
I_D ≅ --1 A, V_GEN = --10 V, R_G = 6 Ω
I_F = --1.1 A, di/dt = 100 A/ms
Min
Typ
Max Unit
--1
V
100
nA
--1
--5
mA
--30
A
0.042
0.050
0.070
0.080
Ω
8
S
--0.8
--1.2
V
16
24
3.6
nC
3.1
11
20
5
10
40
80
ns
20
40
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 10 thru 6 V
24
5V
18
12
4V
6
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS -- Drain-to-Source Voltage (V)
Transfer Characteristics
30
T_C = --55_C
24
25_C
18
125_C
12
6
0
0
1
2
3
4
5
6
V_GS -- Gate-to-Source Voltage (V)
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2-2
Document Number: 71144
S-21251—Rev. B, 05-Aug-02