SI5435BDC_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si5435BDC
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −4.3 A
V_GS = −4.5 V, I_D = −1.3 A
V_DS = −15 V, I_D = −4.3 A
I_S = −1.1 A, V_GS = 0 V
V_DS = −15 V, V_GS = −10 V, I_D = −4.3 A
Simulated Measured
Data
Data
2.2
109
0.036
0.067
9
−0.78
0.035
0.067
8
−0.80
13
16
2.7
2.7
4.1
4.1
Unit
V
A
Ω
S
V
nC
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 73149
S-52525Rev. B, 12-Dec-05