SI4971DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 25-V (G-S) MOSFET

Si4971DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "20 V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = 0 V, V_GS = "25 V
V_DS = - 24 V, V_GS = 0 V
V_DS = - 24 V, V_GS = 0 V, T_J = 55_C
V_DS = - 5 V, V_GS = - 10 V
V_GS = - 10 V, I_D = - 7.2 A
V_GS = - 6 V, I_D = - 6.4 A
V_DS = - 10 V, I_D = - 7.2 A
I_S = - 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 15 V, V_GS = - 10 V, I_D = - 7.2 A
V_DD = - 15 V, R_L = 15 W
I_D ^ - 1 A, V_GEN = - 10 V, R_G = 6 W
I_F = - 1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
-1
-3
V
"100
nA
"200
-1
mA
- 25
- 30
A
0.021
0.026
W
0.025
0.033
18
S
- 0.8
- 1.2
V
30
45
5.1
nC
8.9
11
17
15
25
75
120
ns
60
90
75
110
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
V_GS = 10 thru 5 V
4V
3V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
30
24
18
12
T_C = 125_C
6
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72174
S-03598—Rev. A, 31-Mar-03