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SI4963BDY Datasheet, PDF (2/3 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET | |||
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CompSlePteICE Device Model Si4963BDY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Diode Forward Voltageb
Dynamica
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = â250 µA
VDS = â5 V, VGS = â4.5 V
VGS = â4.5 V, ID = â6.5 A
VGS = â2.5 V, ID = â2 A
VDS = â10 V, ID = â6.5 A
IS = â1.7 A, VGS = 0 V
VDS = â10 V, VGS = â4.5 V, ID = â 6.5 A
VDD = â10 V, RL = 10 â¦
ID â
â1 A, VGEN = â4.5 V, RG = 6 â¦
Simulated Measured
Data
Data
1.1
92
0.025
0.041
16
â0.80
0.025
0.040
18
â0.75
12
14
2.6
2.6
4.6
4.6
30
25
22
30
65
70
20
50
Unit
V
A
â¦
S
V
nC
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ⤠300 µs, duty cycle ⤠2%.
www.vishay.com
2
Document Number: 72770
20-May-04
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