SI4953ADY_06 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

SPICE Device Model Si4953ADY
Vishay Siliconix
SPECIFICATIONS (T_J = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
V_GS(th)
I_D(on)
r_DS(on)
g_fs
V_SD
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = V_GS, I_D = −250 µA
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −4.9 A
V_GS = −4.5 V, I_D = −3.7 A
V_DS = −10 V, I_D = −4.9 A
I_S = −1.7 A, V_GS = 0 V
V_DS = −15 V, V_GS = −10 V, I_D = −4.9 A
V_DD = −15 V, R_L = 15 Ω
I_D ≅ −1 A, V_GEN = −10V, R_G = 6 Ω
I_F = −1.7 A, di/dt = 100 A/µs
Simulated Measured
Data
Data
2.1
93
0.046
0.072
9
−0.80
0.045
0.075
9
−0.80
15
15
4
4
2
2
12
7
16
10
20
40
30
20
33
30
Unit
V
A
Ω
S
V
nC
ns
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
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2
Document Number: 70648
S-60073Rev. B, 23-Jan-06