English
Language : 

SI4948BEY_05 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual P-Channel 60-V (D-S) 175 Celsius MOSFET
SPICE Device Model Si4948BEY
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
On-State Drain Currenta
VGS(th)
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
VDS = VGS, ID = −250 µA
VDS = −5 V, VGS = −10 V
VGS = −10 V, ID = −3.1 A
VGS = −4.5 V, ID = −2 A
VDS = −15 V, ID = −3.1 A
IS = −2 A, VGS = 0 V
VDS = −30 V, VGS = −10 V, ID = − 3.1 A
VDD = −30 V, RL = 30 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
Simulated Measured
Data
Data
2.1
50
0.100
0.120
7
−0.81
0.100
0.126
8.5
−0.80
13
14.5
2.2
2.2
3.7
3.7
10
10
14
15
40
50
22
35
Unit
V
A
Ω
S
V
nC
ns
www.vishay.com
2
Document Number: 72872
S-52399Rev. B, 21-Nov-05