SI4932DY Datasheet, PDF (2/7 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si4932DY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_DS
ΔV_DS/T_J
ΔV_GS(th)/T_J
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_GS = 0 V, I_D = 250 µA
I_D = 250 µA
V_DS = V_GS , I_D = 250 µA
V_DS = 0 V, V_GS = ± 20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55 °C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 7 A
V_GS = 4.5 V, I_D = 5 A
V_DS = 15 V, I_D = 7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C_iss
C_oss
C_rss
Q_g
N-Channel
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 10 V, I_D = 5 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
N-Channel
V_DS = 15 V, V_GS = 4.5 V, I_D = 5 A
f = 1 MHz
N-Channel
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 4.5 V, R_g = 1 Ω
N-Channel
V_DD = 15 V, R_L = 3 Ω
I_D ≅ 5 A, V_GEN = 10 V, R_g = 1 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
Body Diode Voltage
V_SD
Body Diode Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
T_C = 25 °C
I_S = 2 A
N-Channel
I_F = 5 A, dI/dt = 100 A/µs, T_J = 25 °C
Min.
30
1.2
20
0.2
Typ. Max. Unit
34
-6
0.0122
0.0138
40
2.5
100
1
10
0.015
0.017
V
mV/°C
V
nA
µA
A
Ω
S
1750
265
pF
115
32
48
14.7
22
nC
5.1
3.7
1.0
2.0
Ω
21
40
10
20
26
50
8
16
ns
9
18
8
16
24
45
8
16
2.6
A
30
0.75
1.2
V
23
45
ns
16
32
nC
13
ns
10
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69012
S-83042-Rev. A, 22-Dec-08